He^(2+)注入六方SiC晶体损伤效应的拉曼光谱研究

Raman Spectrosopy Study of Implantation Damage of He^(2+) Implanted Hexagonal SiC Crystals

利用拉曼光谱研究了He^(2+)注入六方SiC晶体样品时的损伤缺陷随注量的变化关系,并采用直接碰撞/缺陷模拟模型与多级损伤累积模型,模拟了室温及723,873,1023K下晶体样品的无序度随注量的变化关系。测试结果表明:随着注量的增加,晶体样品无序度增大,样品的拉曼特征峰强度减小。

Raman spectroscopy is used to study the relationship between the injection damage defect and the fluence of He 2＋ implanted hexagonal SiC crystals. Two models are used to simulate the relationship between the disorder of He 2＋ implanted hexagonal SiC crystals and the fluence at room temperature, 723 K, 873 K and 1 023 K. The results show that the disorder increases and the intensity of Raman charateristic peaks decreases with the increase of fluence.