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Thermal analysis of GaN-based laser diode mini-array

Thermal analysis of GaN-based laser diode mini-array
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摘要 Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K. Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.
作者 Jun-Jie Hu Shu-Ming Zbang De-Yao Li Feng Zhang Mei-Xin Feng Peng-Yan Wen Jian-Ping Liu Li-Qun Zhang Hui Yang 胡俊杰;张书明;李德尧;张峰;冯美鑫;温鹏雁;刘建平;张立群;杨辉(Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;University of Chinese Academy of Sciences, Beijing 100049, China)
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第9期311-315,共5页 中国物理B(英文版)
基金 Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0402002,2016YFB0401803,2017YFB0405002,2017YFB0405003,and 2017YFB0405005) the National Natural Science Foundation of China(Grant Nos.61574160,61704184,and 61334005) the Strategic Priority Research Program of the Chinese Academy of Science(Grant No.XDA09020401) the Chinese Academy of Science Visiting Professorship for Senior International Scientists(Grant No.2013T2J0048) the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20170430) the CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows,China(Grant No.2016LH0026)
关键词 GaN laser diode laser diode array thermal analysis temperature distribution GaN laser diode laser diode array thermal analysis temperature distribution
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