Modulation Spectroscopy of GaAs Covered by InAs Quantum Dots
参考文献17
-
1See, for example, Bimberg D, Grundmann M and Ledentsov N N 1999 Quantum Dot Heterostructures(Chichester: Wiley) and references therein
-
2Wang Z G, Chen Y H, Liu F Q and Xu B 2001 J. Cryst.Growth 227-228 1132
-
3Chu L, Zrenner A, Bichler M and Abstreiter G 2001 Appl.Phys. Lett. 79 2249
-
4Pettersson H, BSeith L, Carlsson N, Seifert W and Samuelson L 2001 Appl. Phys. Lett. ~9 78
-
5Zhang Y C, Huang C J, Ye X L, Xu B, Ding D, Wang JZ, Li Y F, Liu F Q and Wang Z G 2001 Chin. Phys. Lett.18 1411
-
6Wei Y Q, Liu H Y, Chai C L, Xu B, Ding D and Wang ZG 2001 Chin. Phys. Lett. 18 982
-
7van Hoof C, Deneffe K, de Boeck J, Arent D J and Borghs G 1989 Appl. Phys. Lett. 54 608
-
8Shen H and Dutta M 1995 J. Appl. Phys. 78 2151
-
9Pan S H, Huang S, Chen W, Zhang C Z, Sheng C and Wang X 1994 Chin. Phys. Lett. 11 119
-
10Pollak F H 1998 Group Ⅲ Nitride Semiconductor Compounds: Physics and Applications ed Gil B (New York:Oxford University Press)
-
1黄社松,牛智川,倪海桥,詹锋,赵欢,孙征,夏建白.Extremely Low Density InAs Quantum Dots with No Wetting Layer[J].Chinese Physics Letters,2007,24(4):1025-1028.
-
2俞超,俞建.良定鞍点问题的通有性[J].贵州工业大学学报(自然科学版),1998,27(2):15-17. 被引量:1
-
3刘永军,刘英.Interaction of Hg Atom with Bare Si(111) Surface[J].Chinese Journal of Structural Chemistry,2006,25(12):1475-1480.
-
4王玉田,庄岩,马文全,王圩,杨小平,陈宗圭,江德生,郑厚植.ouble crystal X-ray diffraction study of MBE self-organized InAs quantum dots[J].Science China Mathematics,1998,41(2):172-176.
-
5Zhongyuan YU,Yongqiang WEI.Explanation of Unusual Photoluminescence Behavior from InAs Quantum Dots with InAlAs Capping[J].Journal of Materials Science & Technology,2005,21(4):559-562. 被引量:1
-
6杨希峰,刘昭麟,陈平平,陈效双,李天信,陆卫.Broadening of Photoluminescence by Nonhomogeneous Size Distribution of Self-Assembled InAs Quantum Dots[J].Chinese Physics Letters,2008,25(8):3059-3062.
-
7梁松,朱洪亮,潘教清,赵玲娟,王圩.Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates[J].Chinese Physics Letters,2005,22(10):2692-2695. 被引量:1
-
8蒋中伟,王文新,高汉超,李辉,杨成良,何涛,吴殿仲,陈弘,周均铭.Effect of GaAs/GaSb Combination Strain-Reducing Layer on Self-Assembled InAs Quantum Dots[J].Chinese Physics Letters,2008,25(7):2649-2652.
-
9黄社松,牛智川,詹锋,倪海桥,赵欢,吴东海,孙征.High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth[J].Chinese Physics B,2008,17(1):323-327.
-
10Yudai Nakanishi,Ayumi Ishi,Chika Ohata,David Soriano,Ryo Iwaki,Kyoko Nomura~,Miki Hasegawa,Taketomo Nakamura,Shingo Katsumoto,Stephan Roche,Junji Haruyama.Large edge magnetism in oxidized few-layer black phosphorus nanomeshes[J].Nano Research,2017,10(2):718-728.