砷化镓类半导体材料在太赫兹波段的透射特性研究

Study on the transmissivity for the type of gallium arsenide semiconductor materials at the terahertz band

首先给出了利用光电导天线产生的太赫兹波的时域和频域光谱,进而,基于搭建的太赫兹时域光谱系统,并采用透射光谱法分别测量了砷化镓类型的三种半导体材料在太赫兹波段的透过率。结果表明,基于光电导天线产生的太赫兹波在0~2THz范围内,光谱比较稳定,频率带宽比较宽;砷化镓半导体材料在0~2.0THz范围内的透过率的变化相对较小,具有较高的透过率(>60%),并且明显优于碲化锌以及碲化镉半导体材料在太赫兹波段的透过率。因此,相比于碲化锌以及碲化镉半导体材料而言,砷化镓半导体材料更适用于设计宽频带的太赫兹功能器件。

The time-domain and the frequency-domain spectra of the terahertz （THz） wave a re generated by photoconductor antennas.Furthermore,the transmissivities for t hree kinds of gallium arsenide （GaAs） semiconductor materials are measu red based on the THz time-domain spectroscopy systems and the method of transmission spectra.The results show th at the stable and the broadband THz wave lying between 0and 2THz can be generated by photoconductor ante nnas.Moreover,the transmissivities of GaAs semiconductor material are almost the sam e when the frequency range of the THz wave is from 0to 2THz,which are relatively high and above 60%.Meanwhile,th e transmissivities of GaAs semiconductor material are higher than those of zinc telluride （ZnTe） and cadmium telluride （CdTe） semiconductor materials. Consequently,compared with ZnTe and CdTe semiconductor materials,GaAs semiconductor material is more suitable for designing the broadband THz function al devices.