一种高压大功率集成运算放大器

A High Voltage and High-power Integrated Operational Amplifier

基于Bipolar、JFET兼容工艺,设计了一款单片高压大功率集成运算放大器。整体芯片采用P-JFET作为输入级,具有高输入阻抗、低输入失调电流和较宽的工作带宽等优点;采用BJT作为中间级、输出级和偏置保护电路,具有较快的转换速率、较大的输出功率和较高的可靠性。基于Cadence Spectre对整体电路进行了设计、仿真和优化,并完成了版图的设计和验证。整体电路在±30 V供电条件下,具有3.926μV的输入失调电压、28.67 pA的输入偏置电流和2.65 pA的输入失调电流。并且在8Ω轻负载下实现92.2 dB的电压增益,5.82 MHz的单位增益带宽,可实现38.5 W的有效功率输出。

The paper designed a single chip high voltage and high power integrated operational amplifier based on Bipolar-JFET compatible process . The whole chip adopts P-JFET as input stage, which has the advantages of high input impedance, low input offset current and wide working bandwidth. Using BJT as intermediate stage, output stage and bias protection circuit, it has faster conversion rate, larger output power and higher reliability.The whole circuit is designed, simulated and optimized based on Cadence spectre, and the layout design and verification is completed in the condition of power supply of ± 30 V, the whole circuit has 3.926μV negative voltage, 28.67 pA input bias current and 2.65 pA input offset current. And in 8 Ω under light load to realize the voltage gain of 92.2 dB, 5.82 MHz unit gain