栅极氮化硅膜厚分布优化及产品性能的研究

Study on Thickness Distribution Optimization and Product Property of Gate Silicon Nitride Film

氮化硅薄膜是一种重要的薄膜材料，具有优良的光电特性和物理性能，将在微电子、光电及薄膜晶体管等领域中有广泛的应用。本文采用等离子体增强化学气相沉积法（PECVD）在1．8mx1．5m的基板上制备薄膜晶体管液晶显示器用的氮化硅薄膜。本文研究通过调整腔室电极间距（Spacing）来优化氮化硅薄膜的均匀性（Uniformity），以及优化后的氮化硅薄膜对产品的影响。

Silicon nitride thin film is a kind of important thin film with excellent photoelecmc anu physical properties. It will be widely applied in the fields of microelectronics, optoelec- tronics, and thinfilm transistor. In this paper, the silicon nitride thin film used for TFI？- LCD （thin film transistor liquid crystal display） isobtained on thel. 8rex l. 5m glass sub- strate by the method of plasma enhanced chemical vapor deposition （PECVD）. The paper has studied the uniformity optimization of silicon nitride films by adjusting the electrode spacing of the chambers, and the influence of optimized silicon nitride film on the product.