0.3～2.0 GHz 100 W GaN超宽带功率放大器

100W GaN Power Amplifier with Ultra Wideband of 0.3～2.0 GHz

基于南京电子器件研究所0.25μm GaN HEMT工艺平台,设计了一款0.3~2.0GHz 100 W GaN超宽带功率放大器。GaN HEMT器件的射频参数由负载牵引系统测定,包括最大功率匹配阻抗和最大效率匹配阻抗。放大器用同轴巴伦结构实现超宽带匹配,用高介电常数介质板材制作匹配电路,实现放大器的小型化。放大器偏置电压28V,偏置电流0.5A。测试结果显示,在0.3~2GHz带宽内,放大器小信号增益平坦度小于±1.3dB。典型输出功率大于100 W,最小输出功率90 W,饱和功率增益大于9dB,功率平坦度小于±1.2dB,漏极效率大于50%。

A 100 W GaN power amplifier with ultra wideband of 0.3~2.0 GHz was designed based on 0.25μm GaN HEMT process platform of Nanjing Electronic Devices Institute.The RF parameters of GaN HMET device was measured by load-pull system,including maximum power matching impedance and maximum efficiency matching impedance.Coax-balun was used to get ultra wideband,and high permittivity material was used to fabricate matching circuits to reduce amplifier size.The drain bias voltage of the amplifier is 28 Vand the bias current is 0.5 A.The testing results show that during 0.3~2.0 GHz,the small signal gain flatness is less than ±1.3 dB,the typical output power is 100 W with minimum of 90 W,the saturation power gain is more than 9 dB with gain power flatness less than±1.2 dB,and the drain efficiency is over 50%.