基于45 nm SOI工艺的超宽带毫米波单刀双掷开关的设计

Design of Ultra-broadband Millimeter-wave SPDT Switch Based on 45 nm SOI Technology

提出了基于GlobalFoundries 45nm SOI工艺的布局紧凑的宽带毫米波单刀双掷开关。设计包括了采用串并结构的全频段单刀双掷开关以及采用两级晶体管并联的Ka波段通带单刀双掷开关。设计中采用共面波导串联短截线,实现小尺寸的电感。此外,利用负体偏置技术提高了开关在毫米波波段的性能。设计的单刀双掷开关芯片核心面积为0.35mm×0.16mm。测量结果显示全频段单刀双掷开关在DC^94GHz的插入损耗小于4dB,隔离度大于24dB,而Ka波段通带单刀双掷开关在25~45GHz的插入损耗为2.5~3.2dB,隔离度大于19dB。

Compact and broadband millimeter-wave（MMW）single-pole-double-throw（SPDT）switches in GlobalFoundries 45 nm SOI technology was presented.A full-band SPDT switch with series and shunt structure,and a Ka-band SPDT switch with two-stages shunt transistors were included in the design.Coplanar waveguide（CPW）series stubs were adopted to realize small reactance.In addition,negative body bias technology was utilized to enhance the performance of the switch over millimeter-wave band.The fabricated chip occupied a core area of 0.35 mm ×0.16 mm.Measurement results of the full-band SPDT switch show an insertion loss less than 4 dB and isolation better than 24 dB over DC^94 GHz.For the Ka-band SPDT switch,insertion loss is 2.5~3.2 dB and isolation is better than 19 dB over 25~45 GHz.