在非晶硅上制备角度可控缓坡的方法

Method of Preparing the Angle Controllable Slope on Amorphous Si

介绍了一种利用光的衍射原理制备角度可控缓坡微结构的方法。该方法在光刻步骤中通过调节掩膜板与基片之间的垂直距离来控制光刻胶图形边缘曝光量,光刻显影后得到剖面为正梯形的光刻胶图形,再经过干法刻蚀得到非晶硅的缓坡微结构。结果表明,制备的非晶硅缓坡结构角度(可小于30°)可控,制备方法简单,与半导体工艺兼容,可避免湿法刻蚀带来的过蚀及角度不均匀问题。

A method of preparing angle controllable micro slope microstructure by using the diffraction of light is introduced in this paper.The method is to control the exposure of the edge of the photoresist pattern at the exposure stage by adjusting the distance between the mask plate and the substrate.Then,the photoresist pattern with positive trapezoidal profile is obtained after the photolithographic development.Finally,a micro slope structure with controllable angle on amorphous Si layer is obtained by dry etching.The amorphous silicon gentle slope structure can be controlled with a minimum angle of less than 30°.The preparation method is simple and compatible with the semiconductor process,can avoid the over-etching and angle inhomogeneity caused by the wet etching.