期刊文献+

The third kind electronic memory:Fill gap between volatile and non-volatile

The third kind electronic memory:Fill gap between volatile and non-volatile
原文传递
导出
摘要 With support by the National Natural Science Foundation of China and Fudan university,the research team led by Prof.Zhou Peng (周鹏)at the State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai,China,bring forward a quasi-non-volatile memory technology with fast writing speed and long refresh time,which was published in Nature With support by the National Natural Science Foundation of China and Fudan university,the research team led by Prof.Zhou Peng (周鹏)at the State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai,China,bring forward a quasi-non-volatile memory technology with fast writing speed and long refresh time.
出处 《Science Foundation in China》 CAS 2018年第3期38-38,共1页 中国科学基金(英文版)
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部