大容量抗辐射加固SRAM器件单粒子效应试验研究

Test study of single event effects on large capacity radiation-hardened SRAMs

针对宇航用大容量SRAM器件抗单粒子效应性能的试验评估需要,利用重离子加速器对抗辐射加固32 M Bulk CMOS工艺SRAM和16 M SOI CMOS工艺SRAM进行了单粒子效应模拟试验研究,获得SRAM器件单粒子效应特性并进行在轨翻转率预估;对单粒子翻转试验中重离子射程的影响,不同SEU类型的翻转截面差异,在轨翻转率预估的有关因素等进行了分析讨论。结果表明,这2款抗辐射加固SRAM器件都达到了较高的抗单粒子效应性能指标。试验结果可以为SRAM器件的单粒子效应试验评估提供参考。

The single event effects on 32 M Bulk CMOS SRAM and 16 M SOI CMOS SRAM are tested by using the heavy ion accelerator for the SEE evaluation of the large capacity SRAM device used onboard satellites. The upset rates of the SRAMs in GEO are calculated based on the SEU cross section characteristics. Furthermore, the influence of the heavy ion range, the upsets-pattern-related SEU difference, and the factors pertaining to the in-orbit upsets rate prediction in the SEU test of SPAMs are analyzed. The two kinds of largecapacity SRAMs exhibit a desirable SEE resistance. The results could provide a guidance for the SEU test and evaluation of the SRAMs.