纳米级集成电路与超纯水

Nanometer-grade IC and ultrapure water

阐述美国《国家半导体技术发展路线》中存储器的发展目标对其关键材料超纯水在水质和耗量降低上的要求,以我国8英寸/0.18μm和12英寸生产线的相关数据与其对照,表明在总有机碳、溶解氧等项水质参数已可满足该发展要求,而在SiO2、微粒限定、检测技术以及超纯水耗量降低等方面尚有差距和问题,并提出相应的解决方案,讨论了降低超纯水等项水资源消耗的途径。重申了水回收的意义,关注“功能水”和高效、省能的GDI(聚合型电去离子)装置将是有益的。

The requirements of the memory development target for ultrapure water quality and consumption reduction,as given in National Technology Roadmap for Semiconductor,USA,are briefly described and compared with the data obtained on advanced ultrapure water systems for8-inch0.18-micron and12-inch wafer fabs in China.It is shown that some water quality parame-ters,such as TOC(total organic carbon)and dissolved oxygen,can meet the requirements,while for other parameters,including SiO 2 and particle control,measurement techniques and con-sumption reduction,there still exist gap and problems .Methods for solving the problems are re-commended,and ways for the reduction of ultrapure water are discussed,and the significance of water recovery is illustrated.Attention should be paid to the techniques for functional water and for high-efficient energy-saving graft de-ionization(GDI )unit.