基于重核衰变原理的单电子存储器寿命模型

Modeling of retention of single electron memory on the base of dis in tegration theory

单电子存储器是依据库仑阻塞原理操纵单个电子进行信息存储的一种量子器件。它具有低功耗、高速度、极小尺寸的优点,是现有存储器极有希望的替代品。信息的记忆性能是衡量存储器的一个重要参数,因而对单电子存储器的记忆性能研究有重要的意义。存储器的结构以及温度、电磁辐射等环境因素都对单电子存储器记忆时间产生影响,因而有必要寻求一种模型来综合各种因素对储存器存储寿命的影响。借鉴Gamow、Gurney和Condon处理某些重核α粒子自然衰变的方法对单电子存储器的记忆能力进行研究,考虑到了环境参数和结构参数对记忆性能的影响,给出了一种新的单电子存储器记忆时间模型,并对该模型进行详细的理论分析。

Single-electron memory(SEM)is a certain of quantum devices by which we can con-trol a single electron to realize the store /fetch of information on the principle of Coulomb Block-age(CB).SEM takes advantages of low dissipation,high speed and low dimensions and be-comes the most promising new memory.It is essential to carry on the research of the retention of SEM for which is the most important characteristics to evaluate a memory performance.The struc-ture of SEM and some environment factors like temperature,EMI etc.can affect the retention of SEM.Therefore,it is very important to find a proper model for retention of SEM.A model of re-tention of SEM is proposed in this paper,the natural disintegration theory ofαparticles which proposed by Gamow,Gurney and Condon etc.is applied to SEM.The relations of retention of SEM and the structural and environmental factors are involved in this model.