新型集成电路隔离技术——STI隔离

New isolation technology of IC:STI isolation

集成电路器件的特征尺寸进入深亚微米时代后,由于微细化和性能方面的影响,一些传统的器件结构将不再适用。传统的本征氧化隔离技术由于漏电流、平坦化、高温再分布等方面的原因,将被浅沟隔离技术所取代。论述了集成电路进入深亚微米时代后的STI(浅沟隔离)技术,指出了STI隔离工艺的主要特点、关键工艺及工艺实现方法。

With the IC scaling down to deep-sub micro generation,due to the degradation of performance,any conventional device structure is not applicable to IC.Shallow trench isolation will increasingly instead of LOCOS isolation which has been impacted by leakage currents,pla-narization and redistribution.This article describes the STI isolation technology when the feature size scaled down to deep-sub micron,and indicats the characteristics,process flow and perfor-mance of STI isolation.