期刊文献+

一种应用于SRAM型FPGA寄存器的容错设计 被引量:3

A fault-tolerant scheme applying to SRAM-based FPGA registers
下载PDF
导出
摘要 寄存器作为SRAM型FPGA系统设计中的一个重要组成部分,容易受到太空环境中的高能粒子影响而发生软错误。三模冗余设计方法能够对寄存器进行容错防护,但带来大量的资源和功耗开销;针对此问题该文设计一种基于奇偶校验的双模冗余防护结构,以触发器为单位,利用FPGA查找表结构特点,将两位触发器作为一组进行容错设计,通过奇偶校验选择正确结果输出,能从细粒度方面对寄存器的数据位进行错误屏蔽。该方法于Xilinx Virtex?-6 FPGA中进行设计验证,实验结果表明该方法设计实现的寄存器相对于三模冗余设计方法能减少16.7%的触发器资源和50%的查找表资源。 Register is an important part of SRAM-based FPGA system that can be affected by soft errors caused by high energy particles in the space environment. Triple modular redundancy(TMR) can effectively achieve fault-tolerant protection for registers, but it brings a lot of resources and power consumption. A scheme of parity check dual modular redundancy(PC-DMR) is presented for such problems based on the structure of the LUTs in FPGAs with flip-flops as the unit. This scheme designs two flip-flops as a fault-tolerant pair, and it uses parity check to select the correct output and shield errors of register data from a fine-grained aspect.The scheme is designed and verified in Xilinx Virtex?-6 FPGA, and the results show that the proposed scheme can reduce 16.7% flip-flop resources and 50% LUTs resources relative to the triple modular redundancy design scheme.
作者 邱根 毕东杰 彭礼彪 QIU Gen, BI Dongjie, PENG Libiao(School of Automation Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China)
出处 《中国测试》 CAS 北大核心 2018年第9期75-79,95,共6页 China Measurement & Test
基金 国家自然科学基金(61701095 61601096 61371049) 四川省科技计划项目(2017GZ0338) 装备发展部重点基金(9140A17050215DZ02047)
关键词 双模冗余 故障容错 寄存器 软错误 三模冗余 DMR fault-tolerant registers soft error TMR
  • 相关文献

参考文献1

二级参考文献19

  • 1BAUMANN R C. Radiation-induced soft errors in advanced semiconductor technologies[J]. IEEE Transactions on Device and Materials Reliability, 2005, 5(3): 305-316.
  • 2PETERSEN E, KOGA R, SHOGA M A, et al. The single event revolution[J]. IEEE Transactions on Nuclear Science,2013, 60(3): 1824-1835.
  • 3ZHU X W, DENG X W, BAUMANN R, et al. A quantitative assessment of charge collection efficiency of N+ and P+ diffusion areas in terrestrial neutron environment[J]. IEEE Transactions on Nuclear Science, 2007, 54(6): 2156-2161.
  • 4BLACK J D, DODD P E, WARREN K M. Physics of multiple-node charge collection and impacts on single-event characterization and soft error rate prediction[J]. IEEE Transactions on Nuclear Science, 2013, 60(3): 1836-1851.
  • 5BLACK J D, BALL D R, ROBINSON W H, et al. Characterizing SRAM single event upset in terms of single and double node charge collection[J]. IEEE Transactions on Nuclear Science, 2008, 55(6): 2943-2947.
  • 6CALIN T, NICOLAIDIS M, VELAZCO R. Upset hardened memory design for submicron CMOS technology[J]. IEEE Transactions on Nuclear Science, 1996, 43(6): 2874-2878.
  • 7FAZELI M, PATOOGH A, MIREMADI S G et al. Feedback redundancy: a power efficient SEU-tolerant latch design for deep sub-micron technologies[C]//37th Annual IEEE/IFIP International Conference on Dependable Systems and Networks. Edinburgh, UK: IEEE, 2007: 276-285.
  • 8NAN H Q, CHOI K. High performance, low cost, and robust soft error tolerant latch designs for nanoscale CMOS technology[J]. IEEE Transactions on Circuits and Systems, 2012, 59(7): 1445-1457.
  • 9RAJAEI R, TABANDEH M, RASHIDIAN B. Single event upset immune latch circuit design using C-element[C]// 2011 IEEE 9th International Conference on ASIC. IS.l]: IEEE, 2011: 252-255.
  • 10ZHANG C Y, WANG Z S. A novel reliable SEU hardened latch to mitigate multi-node charge collecrion[C]//IET Intemation Conference on Information Science and Control Engineering. Shenzhen, China: IET, 2012: 1-4.

共引文献2

同被引文献42

引证文献3

二级引证文献20

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部