基底温度和离子源能量对薄膜应力的影响

Effects of Substrate Temperature and Ion Source Energyon Stress of Thin Film

在不同的基底温度和离子源能量下,采用电子束蒸发方法在GaAs基底上分别制备了SiO_2、TiO_2和Al_2O_3光学薄膜。测量了所制备薄膜的表面应力,并对不同离子源能量下薄膜的折射率进行了测试。结果表明,三种光学薄膜的表面应力呈不均匀分布,通过调节基底温度和离子源能量能有效减小薄膜应力,SiO_2、TiO_2和Al_2O_3薄膜的平均应力最小值分别为2.9,8.4,25.1MPa。

The optical thin films of SiO2, TiO2 and A12 Oa are prepared on GaAs substrates by using the electron beam evaporation method under different substrate temperatures and ion source energies, respectively. The stress distributions of these thin films are measured, and the refractive indexes of these thin films prepared under different ion source energies are also tested. The results show that, the surface stress distributions of these three kinds of thin films are non-uniform, and the substrate temperature and ion source energy can be adjusted to reduce the stresses of these thin films effectively. The average minimum stresses of SiO2, TiO2 and Al2O3 thin films are 2.9, 8.4 and 25.1 MPa, respectively.