一种用于评估抗辐射DSP单粒子翻转的试验方法

An Experimental Method for Evaluating the SEU of Radiation-Hardened DSP

本文提出了评估DSP电路单粒子翻转效应的试验方法,该方法包含单独静态检测SRAM、通过CPU读取内部寄存器和功能检测等三种方式.根据该方法,设计了DSP电路的单粒子翻转检测软件系统和硬件检测系统,并在HI-13串列重离子加速器上进行了单粒子翻转验证试验,获得了待测DSP器件的地面模拟翻转率数据.利用在轨错误率计算软件,计算出在标准辐照注量(1.0E+7icons/cm2)下电路的SEU在轨软错误率约为1.8E-12错误/位天(GEO,等效3mm Al屏蔽),运用该方法可以较好的评估DSP电路的单粒子翻转性能.

This paper presents a new experimental method to evaluate the SEU performance of radiation-hardened DSP. The method includes three ways of solely detecting SRAM, detecting regs by CPU and function-detecting. Software and hardware detection systems are designed by the method, and SEU experimental test was done on HI- 13 heavy-ion accelerator. The results show that the error rate of DSP is about 1.8E-12 error/bit · day（GEO） under irradiation dose of 1.0E＋7 icons/cm2 , which means the experimental method can be used for well evaluating the SEU performance of DSP.