碳量子点掺杂氮化碳提高的光电化学阴极保护性能研究

Enhancement of Photoelectrochemical Performance of Carbon Quantum Dots Doped Carbon Nitride

目的研究g-C_3N_4/C-Dots-M复合材料的光电化学阴极保护性能。方法采用X射线衍射(XRD)、扫描电子显微镜(SEM)和紫外可见漫反射光谱技术对样品的晶体结构、微观形貌和光吸收性能进行表征。通过电化学测试可见光照射下g-C_3N_4/C-Dots-M复合材料光电极偶联316L不锈钢后的光电化学阴极保护电流密度和电位变化曲线,研究材料的光电化学阴极保护性能。结果可见光照射下,该偶联体系的光致混合电位下降至-0.43 V(vs. Ag/AgCl),光电化学阴极保护电流密度达到4.3μA/cm。结论得益于碳量子点优异的电子传导特性,g-C_3N_4/C-Dots-550复合材料的光电化学阴极保护性能比纯g-C_3N_4的明显增强。该复合材料在光电化学阴极保护方面展现了较大的应用潜力。

Objective To research the photoelectrochemical cathodic protection performance of g-C3N4/C-Dots-M of the composite material. Methods The structure and morphology of the samples were characterized by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, and UV-Vis diffuse reflectance spectroscopy. The photoelectrochemical cathodic protection performance was studied by testing the cathodic protection current density-time and potential-time of g-C3N4/C-Dots- Mcompo-site material under visible light illumination. Results Under visible light illumination, the mixed potential of the g-C3N4/C-Dots-550 composite coupled with 316L SS dropped to ？0.43 V, and the photoinduced current density of the couple reached 4.3 μA/cm2. Conclusion Compared to pure g-C3N4, g-C3N4/C-Dots-M composites showed enhanced photoelectro-chemical cathodic protection performance. This is due to the excellent electrical conductivity of carbon quantum dots. This composite shows tremendous potential in application of photoelectrochemical cathodic protection.