低缺陷Si基碲镉汞分子束外延工艺研究

Study of Low-defect Si-based HgCdTe Molecular Beam Epitaxy Process

随着焦平面探测器向超大面阵、小像元方向发展,对盲元率尤其连续盲元、均匀性等要求越来越高。材料表面缺陷已经成为抑制Si基碲镉汞分子束外延(Molecular Beam Epitaxial,MBE)技术在更广范围内应用的一个重要因素。通过解决MBE系统束流稳定性、束流测量的精确性和生长温度控制的稳定性共3个MBE生长碲镉汞材料精确控制的关键问题,以及通过正交试验优化生长参数,将Si基碲镉汞材料缺陷密度控制在500cm^(-2)以内,最优值达到57.83cm-2。

With the development of HgCdTe infrared focal plane arrays toward super-large sizes and small pixels, the requirements of blind pixel rate, especially continuous blind pixel and uniformity, are increasing. The surface defect has become an important factor to inhibit the application of Si-based HgCdTe molecular beam epitaxy （MBE）. By solving three key problems of MBE-grown HgCdTe, namely, beam stability, beam measurement accuracy and growth temperature control stability, and by optimizing the growth parameters through orthogonal experiments, the defect density of Si-based HgCdTe materials is controlled within 500 cm^-2 and the optimal value is 57.83 cm^-2 .