摘要
采用直流电弧等离子辅助法合成了β-SiC纳米分支结构。用扫描电镜和透射电镜,X射线电子能谱和拉曼光谱等对样品进行表征,发现分级生长的SiC纳米线为单晶结构,沿<111>方向生长。β-SiC纳米分支结构通过气-液-固(VSL)机制合成。β-SiC纳米分支结构在425 nm处有一个强的发光峰。
The β-SiC hierarchical nanostructures were synthesized by plasma assisted DC arc discharge of the highly pure Si,SiO2 and graphite powders and a small amount of Fe catalyst grains mixed in a water-cooled graphite crucible. The influence of the synthesis conditions,including the molar ratio of the reactants and discharge voltage,current and time,on the β-SiC hierarchical nanostructures was investigated with scanning electron microscopy,high resolution transmission electron microscopy,X-ray photoelectron spectroscopy,energy dispersive spectroscopy and Raman spectroscopy. The results show that the vapor-liquid-solid growth mechanism was responsible for the Fe-catalyzed, 111 preferentially grown β-SiC nano-wires,synthesized under the optimized conditions. Moreover,strong light emission at 425 nm was observed from the hierarchical β-SiC nanostructures.
作者
王秋实
吴宛泽
谢永辉
王维龙
Wang Qiushi;Wu Wanze;Xie Yonghui;Wang Weilong(College of New Energy,Bohai University,Jinzhou 121013,China)
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2018年第9期786-790,共5页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金项目(11504028)