摘要
Devices of electric double-layer transistors (EDLTs) with ionic liquid have been employed as an effective way to dope carriers over a wide range. However, the induced electronic states can hardly survive in the materials after releasing the gate voltage VG at temperatures higher than the melting point of the selected ionic liquid. Here we show that a permanent superconductivity with transition temperature Tc of 24 and 15K is realized hi single crystals and polycrystalline samples of HfNCI and ZrNCI upon applying proper VG's at different temperatures. Reversible change between insulating and superconducting states can be obtained by applying positive and negative VG at low temperature such as 220K, whereas VG 's applied at 250K induce the irreversible superconducting transition. The upper critical field He2 of the superconducting states obtained at different gating temperatures shows similar temperature dependence. We propose a reasonable scenario that partial vacancy of Cl ions could be caused by applying proper VG's at slightly higher processing temperatures, which consequently results in a permanent electron doping in the system. Such a technique shows great potential to systematically tune the bulk electronic state in the similar two-dimensional systems.
Devices of electric double-layer transistors (EDLTs) with ionic liquid have been employed as an effective way to dope carriers over a wide range. However, the induced electronic states can hardly survive in the materials after releasing the gate voltage VG at temperatures higher than the melting point of the selected ionic liquid. Here we show that a permanent superconductivity with transition temperature Tc of 24 and 15K is realized hi single crystals and polycrystalline samples of HfNCI and ZrNCI upon applying proper VG's at different temperatures. Reversible change between insulating and superconducting states can be obtained by applying positive and negative VG at low temperature such as 220K, whereas VG 's applied at 250K induce the irreversible superconducting transition. The upper critical field He2 of the superconducting states obtained at different gating temperatures shows similar temperature dependence. We propose a reasonable scenario that partial vacancy of Cl ions could be caused by applying proper VG's at slightly higher processing temperatures, which consequently results in a permanent electron doping in the system. Such a technique shows great potential to systematically tune the bulk electronic state in the similar two-dimensional systems.
作者
张帅
高默然
傅焕俨
王欣敏
任治安
陈根富
Shuai Zhang;Mo-Ran Gao;Huan-Yan Fu;Xin-Min Wang;Zhi-An Ren;Gen-Fu Chen(Beijing National Laboratory for Condensed Matter Physics,and Institute of Physics,Chinese Academy of Sciences,Beijing 100190;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049;School of Physics and Electronics,Shandong Normal University,Jinan 250014 4Collaborative Innovation Center of Quantum Matter,Beijing 100190)
基金
Supported by the National Natural Science Foundation of China under Grant No 11704403
the National Key Research Program of China under Grant No 2016YFA0401000 and 2016YFA0300604
the Strategic Priority Research Program(B)of Chinese Academy of Sciences under Grant No XDB07020100