基于SiGe BiCMOS工艺的X波段四通道幅相控制芯片设计

Design of X-band Four Channel T/R Core-Chip Based on SiGe BiCMOS Process

本设计基于0.18μm SiGe BiCMOS工艺设计了一款X波段四通道幅相控制芯片。芯片由四个幅相控制通道及两级功率分配器组成。详细分析了芯片中各单元电路设计及可能存在的问题。测试结果表明,在9.5-10 GHz的设计频段内,噪声系数小于3.0 dB,输出1dB功率压缩点大于11.5 dBm。

A four-channel X-band T/R Core-Chip is realized in a 0.18 μm SiGe BiCMOS platform. This Core-Chip consists of four T/R channel and two level power combiner. All key circuits in this chip is discussed in detail, with advices on how to avoid potential pitfalls in the design process. Noise figure of this chip is lower than 3.0 dB and the OP-1 dB is larger than 11.5 dBm within 9.5 – 10 GHz.