摘要
The double barrier quantum well（DBQW） resonant tunneling diode（RTD） structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge（1-z）Cz on Si（1-x-y）GexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.
The double barrier quantum well（DBQW） resonant tunneling diode（RTD） structure made of SiGeSn/GeC/SiGeSn alloys grown on Ge substrate is analyzed. The tensile strained Ge（1-z）Cz on Si（1-x-y）GexSny heterostructure provides a direct band gap type I configuration. The transmission coefficient and tunneling current density have been calculated considering single and multiple quantum wells. A comparative study of tunnelling current of the proposed structure is done with the existing RTD structure based on GeSn/SiGeSn DBH. A higher value of the current density for the proposed structure has been obtained.
基金
supports from B.P.Poddar Institute of Management and Technology(ECE Dept),Kolkata
support by TEQIP-PhaseⅢunder University College of Technology-Calcutta University(UCT-CU)through award of a fellowship
