摘要
The GaSb-based distributed Bragg reflection（DBR） diode laser with 23 rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma（ICP） etching. The ICP etching conditions were optimized and the relationship among etching depth, duty ratio and side-mode suppression ratio（SMSR） was studied. The device with a ridge width of 100 μm, gratings period of 13 μm and etching depth of 1.55 μm as well as the duty ratio of 85% was fabricated, its maximum SMSR reached 22.52 dB with uncoated cavity facets under single longitudinal operation mode at room temperature.
The GaSb-based distributed Bragg reflection（DBR） diode laser with 23 rd-order gratings have been fabricated by conventional UV lithography and inductively coupled plasma（ICP） etching. The ICP etching conditions were optimized and the relationship among etching depth, duty ratio and side-mode suppression ratio（SMSR） was studied. The device with a ridge width of 100 μm, gratings period of 13 μm and etching depth of 1.55 μm as well as the duty ratio of 85% was fabricated, its maximum SMSR reached 22.52 dB with uncoated cavity facets under single longitudinal operation mode at room temperature.
基金
Project supported by the National Basic Research Program of China(Nos.2016YFB0402403,2014CB643903)
the National Natural Science Foundation of China(Nos.61790583,61435012)
