基于双脉冲试验的双IGBT模块母线回路寄生电感快速计算方法

A Fast Calculation Method of Parasitic Inductances in the Bus Circuit of Double-IGBT Module Based on Double-pulse Experiment

双IGBT模块上承受的过电压会导致系统可以控制的电流幅值减小,系统的过压保护值下降,从而限制控制策略的实施。该过电压的大小受整个回路寄生电感的影响,为了在设计之初控制该参数,需要对整个回路上各部件及其联接方式形成的电感值都提出要求。文章提出一种双IGBT模块母线回路寄生电感快速计算方法,其利用双脉冲试验关断波形进行寄生电感参数计算,只需少量数据即可完成母线回路寄生电感的估算,进而对各部件提出电感值要求。通过计算结果对比可知,该方法与采用开通波形计算方法相比,具有符合项目正向设计原则、计算速度快等特点。

Voltage spike suffered by double-IGBT module will lower the current that system can control and pull down the safety threshold, which restricts the control scheme to be used. The overvoltage is determined by the parasitic inductances in the circuit. In order to control this parameter at the initial period of system design, it is necessary to figure out a method to calculate the parasitic inductances. In this paper, it presented a fast calculation method for the parasitic inductances of double-IGBT module bus circuit, which uses the turnoff waveform of double-pulse experiment. Only a small amount of data is needed to calculate the parasitic inductances of every part in the circuit, and then the design requirements of each part can be given. Compared with the calculation method using turn-on waveform of double-pulse experiment, the results show that the proposed method meets positive design principle and has faster computing speed.