逆导型IGBT技术发展综述

Review of Reverse Conducting IGBT Technology Development

由于逆导型IGBT（RC-IGBT）具有尺寸小、功率密度高、成本低等诸多优点,因此引起人们的广泛关注和研究。侧重适用于电网应用的高压器件,回顾了RC-IGBT的技术发展,包括原始结构和工作原理、回跳问题的解决、背面掺杂优化、二极管性能优化等方面的内容。基于引导IGBT区结构,还进一步综述了RC-IGBT的功耗优化、关断软度、短路坚固性、二极管浪涌电流和温度特性等性能优势。各方面的技术进步,有望使RC-IGBT在包括电网应用的各种领域中充分发挥其性能优势。

With the advantages of small size, high power density and low cost, the reverse-conducting IGBT（RC-IGBT） has attracted wide attention and research interest. We review the development of RC-IGBT technology, and focus on high-voltage devices which is suitable for power grid applications. The content includes the primitive structure and operating principle, snapback problem solving, back-side doping optimization, and diode performance optimization. On the basis of the pilot IGBT structure, we further discuss the power optimization, turn-off softness, short circuit robustness, diode surge current, temperature characteristics, and other potential performance advantages of RC-IGBTs. A series of technological advances are expected to enable us to take full advantage of its performance in a wide range of applications including power grid applications.