大功率沟槽栅场终止IGBT器件物理模型参数提取的新方法（英文）

A Novel Parameter Extraction Method for High-power Trench-gated Field-stop IGBT Physical Model

针对沟槽栅场终止技术IGBT器件,提出一种新颖的模型参数提取方法,给出详细的处理流程,并在考虑模型参数偏差的情况下分析IGBT器件串联中的电压不均衡问题。首先,采用功率器件曲线测试仪测试了器件的极间电容,从而拟合出IGBT芯片的有源区面积。通过功率半导体器件参数手册,结合相关半导体理论,反向计算获得其主要模型参数。通过搭建双脉冲测试平台,拟合开关过程测试曲线获得IGBT器件和时间相关的模型参数。在不同的试验条件下,测试、仿真结果的比较验证提取的模型参数,从而证实建议的参数提取方法。利用提取的模型参数,在考虑器件及驱动参数偏差的情况下分析柔性高压直流输电工程中的IGBT串联电压不均衡问题。

A novel parameter extraction method was presented for trench-gated field-stop IGBT （insulated gate bipolar transistor） physical model, the detailed procedure was given, and the voltage unbalance in IGBTs series connection was discussed by considering the model parameter deviation. The active area of IGBTs chip was extracted from the terminals capacitances, which were measured with power device curve tracer. Combining the power semiconductor device theory with the manufacturer＇s datasheet, the terminals capacitances were modeled precisely. Furthermore, the main model parameters were extracted by proposed reverse calculation. Then a double-pulse test platform was built to fit the model parameters related to the time. Finally, the proposed extracting method was validated by comparison between the measurement and simulation results with double-pulse experiment at different bus voltage level. The voltage unbalance in series connection was discussed for HVDC-Flexible transmission project, which was caused by the model and driving parameter deviation.