摘要
对肖特基二极管的设计原理、制造工艺、在高温反偏试验（HTRB，hi。ghtemperature reverse bias）中形成热点从而导致损坏的机理进行分析，找出肖特基二极管进行HTRB试验时容易出现失效的原因。对肖特基二极管的HTRB试验有重要的指导意义。
In this paper, the design principle, manufacturing process, hot spot and failure mechanism of schottlcy diode are analyzed. The reason for the failure of schottky diode in HTRB （high temperature reverse bias）test is found. It has important guiding significance to the HTRB test.
作者
陆定红
张运坤
来启发
LU Dinghong;ZHANG Yunkun;LAI Qifa(Guizhou Aerospace Institute of Measurement and Testing Technology,Guiyang 550009,China)
出处
《电子与封装》
2018年第A01期50-52,63,共4页
Electronics & Packaging
