碳杂质对直拉硅单晶中氮氧复合体浅热施主形成的影响

Effect of Carbon Impurity on Nitrogen-oxygen Complexes Formation as Shallow Thermal Donors in Czochralski Silicon

本文研究了碳杂质对掺氮直拉硅单晶中氮氧复合体浅热施主形成的影响。电阻率测试和低温傅里叶远红外吸收光谱研究表明:碳杂质显著降低了掺氮直拉硅单晶在650℃退火时所形成的氮氧复合体浅热施主浓度。此外,研究还发现碳杂质使掺氮直拉硅单晶在650℃退火时形成了碳氧复合体和更多的氧沉淀核心,由此消耗了更多的间隙氧原子。这一发现被认为是碳杂质抑制掺氮直拉硅单晶中氮氧复合体浅热施主形成的主要原因。

The effect of carbon impurity on the formation of nitrogen-oxygen complexes as the shallow thermal donors in nitrogen-doped Czochralski silicon（C-NCz） has been investigated. The resistivity measurement and the low-temperature Fourier far infrared absorption spectra show that carbon can significantly suppress the formation of N-O complexes during the annealing of 650℃. In addition, carbon in NCZ silicon enables the formation of carbon-oxygen complexes and enhances oxygen precipitate nucleation at 650℃, thereby consuming more interstitial oxygen atoms. This is believed to be the primary reason why carbon inhibits the formation of N-O complexes.