一种温度系数低于1×10^(-6)/℃的带隙基准电压源

A Bandgap Voltage Reference with Temperature Coefficient Less Than 1×10^(-6)/℃

提出了一种温度系数低于1×10^(-6)/℃的曲率补偿带隙基准电压源。采用正温度系数电压对具有互补温度系数的BJT射-基极电压进行1阶补偿,向BJT射极注入互补温度系数电流,在输出电流中引入曲率正补偿项Tln T,以实现高阶温度补偿。同时,提出了一种新型曲率补偿的低压实现电路。基于标准0.18μm CMOS工艺进行电路设计。仿真结果表明,在-40℃～125℃范围内,常压、低压带隙基准电压源的温度系数分别为3.48×10^(-7)/℃和4.73×10^(-7)/℃,电源抑制比分别为-73dB和-60dB,最大消耗电流分别为22μA和19μA。该新型低压曲率补偿带隙基准电压源的工作电压为0.9V,面积为0.019 8mm^2。

A new sub 1×10-6/℃ curvature compensated bandgap voltage reference（BGR）was presented.The complementary to absolute temperature（CTAT）voltage component of a forward biased BJT was compensated in 1st-order by aproportional to absolute temperature（PTAT）voltage,while the residual Tln Tterm was corrected by injecting a CTAT current into the emitter of BJT.The TlnT term was used to implement the high order compensation.A low voltage BGR using the proposed curvature compensation method was also proposed.All the circuits were designed in a standard 0.18μm CMOS process.The simulation results showed that the proposed normal and low voltage BGRs achieved a temperature coefficient（TC）of 3.48 ×10-7/℃ and 4.73 ×10-7/℃ respectively over the temperature range of -40℃ to 125℃.The power supply rejection ratio of the two BGRs was better than -73 dB and -60 dB respectively at typical case.The maximum dissipating current was 22μA and 19μA respectively.The minimum operating voltage of the low voltage BGR was about 0.9 V,and the area was 0.019 8 mm2.