摘要
异构双核SoC结构复杂,不同部分受到单粒子翻转(SEU)的影响程度不同。采用单一的技术对整个SoC进行加固,既浪费资源,效果也不好。根据不同部分受SEU影响的不同特点,选取SoC中受SEU影响最大的几个部分进行优化加固。使用自动三模冗余添加技术对处理器的寄存器堆和取指通道进行了加固,使用汉明码对存储器进行了加固,使用软硬协同的软件签名技术对CPU运行的程序进行了检测,不会对CPU的性能产生影响。仿真和物理实现的结果表明,相对于未加固的设计,该方案抗SEU能力提高了6倍,与全加固设计的抗SEU能力相当。该方案的面积消耗仅为34%,而全加固的为88%。
The structure of heterogeneous dual-core SoC(HD SoC)is complex,and the influential level of singleevent upsets(SEU)is distinct to different parts.The using of a single technology to strengthen the whole SoC,not only wastes resources,but also had undesirable effects.According to the different characteristics of different parts affected by SEU,some parts which were most affected by SEU were selected to be optimized and reinforced.First,the automatic triple modular redundancy(TMR)technique was adopted to harden the register heaps and the instruction-fetching channels of the processor.Second,the Hamming codes were used to harden the random access memory(RAM).Last,a software signature technique was applied to check the programs which were running on CPU.The scheme needed not to consume additional resources,and had little influence on the performance of CPU.Therefore,the scheme was easy to implement and low cost.The results of simulation and physics implementation showed that the anti-SEU capability of the proposed scheme was 6 times higher than that of the non-reinforced scheme,which was equivalent to the fully hardened scheme.The area consumption of this scheme was only 34%,while the fully reinforced scheme was 88%.
作者
黄琨
杨武
胡珂流
邓军
张涛
HUANG Kun; YANG Wu; HU Keliu; DENG Jun; ZHANG Tao(Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp. , Chongqing 400060, P. R. China)
出处
《微电子学》
CAS
CSCD
北大核心
2018年第5期630-634,共5页
Microelectronics