5T结构全局曝光CMOS图像传感器的研究与设计

Research and Design of 5T Structure Global Shutter CMOS Image Sensor

阐述一种5T全局曝光像素结构的设计。通常的全局曝光CMOS图像传感器采用的是4T结构,该5T全局曝光像素结构在原有结构基础上增加一个曝光控制管,实现对曝光操作的控制,可以使曝光与积分值读出同步进行,提高图像传感器的工作效率,使其有更高的帧频,同时克服电子溢流等问题,使得其拥有更高的成像质量。

Presents a 5T global shutter pixel structure. In general, the global shutter CMOS image sensor adopts the 4T pixel structure, the 5T global shutter pixel structure adds an exposure control transistor to the original structure, which realizes the control of the exposure operation, and it can read the exposure and integral values simultaneously. This pixel structure improves the working efficiency of the image sensor and gives it a higher frame rate, while overcoming the problems of electronic overflow gives the image sensor a higher imaging quality.