摘要
基于反嵌套式共源共栅米勒补偿提出了单极点系统的无电容型LDO线性稳压器.该稳压器采用由反相增益级和反相可变增益级组成的可变增益缓冲器,可提高LDO的压摆率和负载瞬态变化时的稳定性.基于TSMC 0.25μm CMOS工艺,设计了一款2.5V200mA的适合SoC应用的无电容型LDO,仿真结果表明其漏失电压为150mV,在1mA到200mA的负载电流范围内,该LDO在输出电容为0～1μF的范围内都能稳定,负载电流为200mA时,环路的最大相位裕度可达86°,最小相位裕度高达76°.
Based on reversed nested cascade miller compensation（RNCMC）,a single pole system of capacitor-free low-dropout regulator is presented.The LDO adopts a variable-gain-buffer that consists of an inverting stage and a variable gain inverting stage to improve the slew rate and the stability of load stepping.A 2.5 V200 mA capacitorfree LDO for SoC application is targeted by TSMC 0.25μm CMOS process in this paper.Simulation results shows that the dropout voltage is 150 mV,the LDO＇s load current is from 1 mA to 200 mA and the LDO can be stable in the range of 0 to 1μF for output capacitance,the maximum phase margin is up to 86 degrees and the minimum is 76 degrees when the load is at 200 mA.
作者
康瑞
代国定
李沉沉
刘帅
KANG Rui;DAI Guo-ding;LI Chen-chen;LIU Shuai(Institute of Electronic CAD,Xidian University,Xi＇an 710071,China)
出处
《微电子学与计算机》
CSCD
北大核心
2018年第11期20-23,共4页
Microelectronics & Computer
基金
国家自然科学基金(61301067)
