摘要
GaAs多功能MMIC应用于微波毫米波整机系统,替代了以往多个单功能MMIC链接而成的方式,且技术愈发成熟。通过对GaAs多功能MMIC产品的失效分析,发现芯片工艺制程中的易发问题,以不断提升产品良率。借助EMMI (红外微光显微镜)技术,对一款GaAs多功能芯片某移相态不能恢复的故障现象进行分析,定位了失效点。结合微区结构分析在失效位置找出工艺缺陷,阐述了该缺陷造成芯片失效的过程和机理,并提出工艺制程改进方案。
GaAs multi-functional MMIC (MFC), the technology of which becoming more sophisticated, has replaced the combination of several single-function MMICs applied to microwave system. Through the failure analysis of MFC products, find out the technology problems existing in chip-manufacturing process, and improve the yield of products. In this paper, we analyze the phenomenon where a phase-shift channel within a GaAs MFC chip is unrecoverable by means of Emission Microscope, and ascertain the failure point. Locate the defect by further microstructuxe analysis, describe the process and mechanism of chip failure induced by this defect and propose an improvement plan in manufacturing process at last.
作者
周舟
林罡
于永洲
郭啸
贾洁
ZHOU Zhou;LIN Gang;YU Yongzhou;GUO Xiao;JIA Jie(Nanjing Electronic Devices Institute,Nanjing 210016,China)
出处
《电子与封装》
2018年第11期40-43,共4页
Electronics & Packaging