摘要
A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects, which offers a unified understanding for ＂shallow＂ and ＂deep＂impurities and point defects. The underlying physics of computational results using different density-functional theorybased approaches are discussed and interpreted in the framework of the bound exciton model.
A brief history of the impurity theories in semiconductors is provided. A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects, which offers a unified understanding for ＂shallow＂ and ＂deep＂impurities and point defects. The underlying physics of computational results using different density-functional theorybased approaches are discussed and interpreted in the framework of the bound exciton model.
作者
Yong Zhang
张勇(Department of Electrical and Computer Engineering, University of North Carolina at Charlotte)
基金
supported by ARO/MURI (W911NF-101-0524 monitored by Dr. William Clark)
ARO/Electronics (W911NF1610263 monitored by Dr. William Clark and Dr. Michele Gerhold)
Bissell Distinguished Professorship at UNCC
