12kV 4H-SiC N沟道IGBT的设计与实现

Design and Fabrication of 12kV 4H-SiC N-channel IGBT

报道了一款阻断能力为12kV的4H-SiC N沟道绝缘栅双极型场效应晶体管(IGBT)。器件为穿通型IGBT,漂移层厚度为120μm,掺杂浓度为2e14cm^(-3);缓冲层厚度为3μm,掺杂浓度为4e16cm^(-3)。为缓解器件主结边缘处的电场集中效应,采用了结终端扩展(JTE)终端结构。流片测试结果表明,栅极电压20V,集电极正向电流为24A/cm^2时,比导通电阻为140mΩ·cm^2。栅极和发射极短接,集电极电压为13kV时,漏电流小于10μA。

A 4H-SiC N-channel IGBT with a blocking capability of 12 kV was reported. A doping concentration of 2e14 cm-3 and a thickness of 120μm were chosen for the drift layer of the fabricated punch-through IGBT. The buffer layer doping thickness and doping concentration were 3 μm and 4e16 cm-3 , respectively. To relieve the electric field crowding phenomenon at the device periphery, the junction termination extension structure（JTE） was adopted. The measured results show that a forward collector current density of 24 A/cm2 could be obtained with a specific ON-resistance of 140 m2· cm2 and a gate voltage of 20 V. Besides, the leakage current is less than 10 μA with a collector voltage of 13 kV when the gate and emitter electrodes are short-connected.