MgO插层对FeN基复合膜的磁各向异性的影响

Influence of MgO Layer on Magnetic Anisotropy of FeN-based Composite Films

在FeN薄膜中不同位置引入较薄的MgO插层,研究其对FeN合金的磁各向异性能和界面电子结构的影响。结果表明,在FeN薄膜的上界面处插入MgO可以形成Fe-O轨道杂化,使得磁各向异性能(Keff)显著增加,有利于体系向垂直磁各向异性转变;但是,在FeN薄膜的下界面处插入MgO会破坏Cr/MgO间的晶格外延,使得Keff值下降,不利于实现垂直磁各向异性。

Effect of inserting MgO layers on magnetic anisotropy energy and interfacial electronic structure of FeN alloy films was investigated.The results show that by depositing MgO layer above FeN layer,an effective Fe-O orbital hybridization is introduced at FeN/MgO interface,which favors to enhance magnetic anisotropy energy（Keff）and promote perpendicular magnetic anisotropy.However,with deposition of MgO layer below FeN layer,the epitaxial growth between Cr and FeN lattice is destructed,resulting in an obvious Keffdecrement and magnetic anisotropy destruction.