第三代半导体材料SiC平坦化技术的研究现状

Research Status of Third Generation Semiconductor Materials SiC Planarization Technology

在半导体工业中,SiC由于化学性能稳定、导热系数高、热膨胀系数小、耐磨性能好等优良特性,成为了该领域最有发展前景的材料之一。然而,SiC材料硬脆性和化学惰性的特点,针对它的平坦化一直是SiC单晶材料制造的难点并在一定程度上制约着半导体芯片集成技术的发展。为获得理想的表面质量、实现有效的材料去除和平坦化加工,国内外学者提出了许多加工方法。本文结合超光滑表面抛光加工的目标,主要针对加工精度和平坦化加工效果较好、应用较广的磨粒加工、化学机械抛光、磁流变抛光方法的原理特点及存在问题进行归纳分析。

In semiconductor industry, SiC has become one of the most promising materials because of its stable chemical performance, high thermal conductivity, low thermal expansion coeffcient and good wear resistance. However, due to the hard brittleness and chemical inertia of SiC, planarization of SiC has always been a diffcult problem in the fabrication of SiC single crystal materials and has restricted the development of semiconductor chip integration technology to a certain extent. In order to obtain ideal surface quality, achieve effective material removal and planarization processing, scholars at home and abroad have put forward many processing methods. Combining with the goal of ultra-smooth surface polishing, this paper summarizes and analyzes the principle characteristics and existing problems of abrasive machining, chemical mechanical polishing and magneto-rheological polishing which have good machining accuracy and planarization effect and are widely used