微通道板高增益二次电子发射层制备研究

Preparation of High Gain Secondary Electron Emission Layer for Micro-channel Plate

提高微通道板(Micro-channel Plate,MCP)的综合性能一直都是器件使用性能提升首要解决的关键问题。纳米薄膜材料的发展及其制备技术的成熟为微通道板性能提升提供了契机,使用原子层沉积(Atomic Layer Deposition,ALD)技术,在微通道板的通道内壁生长一层Al2O3薄膜作为高二次电子发射层,以增强通道内壁的二次电子发射能力,从而提升微通道板的增益性能。通过调节ALD沉积过程中的循环数,腔室反应温度和前驱体反应时间,分析工艺条件改变对MCP二次电子增益的影响。结果表明ALD沉积工艺参数对MCP二次电子增益有很大影响,使用适当的工艺参数,可得到具有高二次电子增益的MCP。

The overall performance of the MCP is always a key issue for device performance enhancements. Development of nano-film materials and mature preparation technology provide an excellent opportunity for the development of micro-channel plate. A layer of Al2O3 thin film was fabricated on the inner wall of MCP by ALD as the secondary electron emission layer. It can increase the secondary electron emission coefficient of channel walls, and the gain of micro-channel plate. The effect of different process conditions on the electron gain of MCP was analyzed by adjusting cycles, temperatures and reaction time of the ALD deposition process. The results show that the ALD process parameters have a great influence on the electron gain of MCP, and the MCP with high electron gain can be obtained by using the appropriate process parameters.