摘要
本文利用有限势垒（左、右垒高不等）模型,研究了电场对GaAs/Ga<sub>1-x</sub>A1xAs量阱中各子带所对应的激子之影响.采用级数展法开求得于带所对应的电子——空穴重叠函数.通过变分计算得到激子结合能.对阱宽为105（?）的GaAs/Ga<sub>0.66</sub>A1<sub>0.34</sub>As量子阱,电场由0至1.2×10<sup>5</sup>V/cm,我们计算了（电子和空穴的）子带对应的激子之结合能.基于上述计算结果,所得激子峰的能移与实验测量符合得较好,体现出有限势阱模型比无限势阱模型好得多.
The effects of an electric field on the excitons corresponding to di fferent subbands in a Ga As/Ga 1-x AlxAs quantum well(QW)arestudied with use of a finite - potential-barrier model ( FP BM. Thehighness of the barrier at the left isn’ t equal ( to that at the right ) . The method of Series expansion is used to obtain electron - hole overlap functions relevant to the subbands. A model variational calculation of the binding energies of excitons is perfor med.The binding energies of excitons have been calculated for the Ga As/Ga0.66Al0.34 As QW ( 105 A) in the electric field from 0 to 1.2×105V/cm. Based on these, the obtianed energy shifts of excitons agree well experimental results, indicating that the FP BM is much better than the infinite-potenial-barrier model ( I PBM) .
