摘要
采用电沉积法,在AAO模板中成功制备出pn型Cu_2O/CdS纳米线阵列。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射分析(XRD)对样品的形貌和结构进行表征,利用光照开路电位测试和光吸收光谱测试对Cu_2O/CdS纳米线的性能进行了研究。纳米线的直径约100 nm,与AAO模板孔径相同,XRD结果表明Cu_2O/CdS纳米线由立方晶系的Cu_2O和立方晶系与六方晶系混合晶系的CdS组成。Cu_2O/CdS纳米线的光响应性能增强。在Xe灯照射下Cu_2O/CdS纳米线表现出良好的光催化性能,光照7 h后,Cu_2O/CdS纳米线对罗丹明B的降解效率达到66.02%。
pn-Type Cu2O/CdS nanowires arrays were successfully fabricated in the porous anodic aluminum oxide （AAO） template by an electrodeposition method. The surface morphology of CUEO/CdS nanowires was characterized by scanning electron microscopy （SEM） and transmission electron microscopy （TEM）. Structural analysis of Cu2O/CdS nanowires was discussed by X-ray diffraction （XRD） analysis. The difference of open circuit potential and optical absorption spectra were measured to research the properties of Cu2O/CdS nanowires. The diameter of the nanowires is about 100 nm, which is the same as the pore diameter of AAO template. X-ray diffraction analysis identifies a cubic structure of the Cu2O and mixed crystal structures of cubic and hexagonal of the CdS. Light response property of Cu2O/CdS nanowires is enhanced. Meanwhile, Cu2O/CdS nanowires arrays exhibit a good activity for photodegrading Rhodamine B under a Xe lamp irradiation and the degradation efficiency is up to 66.02% after the degradation for 7 h.
作者
张卫国
王淑娟
姚素薇
王宏智
Zhang Weiguo;Wang Shujuan;Yao Suwei;Wang Hongzhi(Sugiyama Laboratory of Surface Technology,School of Chemical Engineering and Technology,Tianjin University,Tianjin 300350,China)
出处
《化学工业与工程》
CAS
CSCD
2018年第6期1-6,共6页
Chemical Industry and Engineering
