摘要
采用磁控溅射法制备了底栅反交叠刻蚀阻挡型(ES)金属氧化物薄膜晶体管(α-IGZO TFT),测试了TFT电流-电压特性曲线。根据TFT的一级近似模型,结合实验数据提出了TFT电特性参数提取方法。在TFT的线性区和饱和区采用线性拟合提取了TFT的场效应迁移率和阈值电压,定义了TFT的开态电流和关态电流,在TFT的亚阈值区分别采用线性拟合和一阶导数的方法提取了TFT的亚阈值摆幅。通过筛选测试条件和数据拟合范围,得到α-IGZO TFT线性区和饱和区场效应迁移率和阈值电压分别为6. 27 cm^2/V·s和7. 7 V;7. 24 cm^2/V·s和4. 3 V,α-IGZO TFT的开关比和亚阈值摆幅分别为109和272 m V/dec。
The bottom gate staggered etch stop（ES）α-IGZO TFT is manufactured using magnetron sputtering, and current-voltage curves are measured. An extraction method of TFT electrical parameters is proposed by combining the experimental data and Level 1 model of TFT. The values of field effect mobility and threshold voltage are extracted, respectively, in the linear and saturation region by linear fitting. On state and off state currents are defined. Subthreshold swing is extracted in the threshold region by the method of linear fitting and the first derivative, respectively. All results are obtained through carefully screening test conditions and data points. The values of field-effect mobility and threshold voltage in the two region are： 6.27 cm 2/V·s and 7.7 V,7.24 cm 2/V·s and 4.3 V, respectively. The switch ratio is 10 9. The subthreshold swing is 272 mV/dec. These results show that this extraction method can be used in area of experiment teaching and scientific research.
作者
陈文彬
何永阳
陈赞
CHEN Wenbin;HE Yongyang;CHEN Zan(School of Optoelectronic Information,University of Electronic Science and Technology,Chengdu 610054,China)
出处
《实验室研究与探索》
CAS
北大核心
2018年第11期42-44,48,共4页
Research and Exploration In Laboratory
基金
电子科技大学本科教学改革研究项目(Y0309402370101954)
