期刊文献+

阈值型忆阻器串联电路研究

Research on Series Circuit of Threshold Memristor
下载PDF
导出
摘要 忆阻器数字逻辑电路主要利用其二值特性和串并联结构实现各种逻辑运算。为了探索二值忆阻器的电路规律,研究了阈值型忆阻器模型的同极性顺序串联和反极性顺序串联电路,并进行仿真分析,获得了忆阻器顺序串联电路的基本规律,发现多个阈值型忆阻器无论以何种方式串联都等效为一个忆阻器。 Memristor digital logic circuit mainly uses its binary characteristics and series-parallel structure to achieve a variety of logic operations.In order to explore the circuit law of binary memristor,the same polarity sequential series and reverse polarity sequential series circuits of threshold memristor model were studied.The memristor series circuit was simulated and the basic law of the memristor series circuit was obtained.It was proved that a plurality of threshold type memristor is equivalent to a memristor no matter which way they are connected in series.
作者 王祥 沈怡然 司德成 吴杰 WANG Xiang;SHEN Yiran;SI Decheng;WU Jie(School of Electronic Information,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)
出处 《杭州电子科技大学学报(自然科学版)》 2018年第6期12-15,27,共5页 Journal of Hangzhou Dianzi University:Natural Sciences
基金 国家自然科学基金资助项目(61771176 61281230357) 浙江省自然科学基金重点资助项目(LZ12F01001)
关键词 忆阻器 二值特性 阈值 串联电路 memristor binary characteristics threshold series circuit
  • 相关文献

参考文献2

二级参考文献27

  • 1CHUA L O. Memristor the missing circuit element [J]. IEEE Transactions on Circuit Theory, 1971, 18 (5) .. 507- 519.
  • 2WILLIAMS R S. How we found the missing memristor ~J]. IEEESpectrum, 2008, 45 (12): 24-31.
  • 3YANG J J, STRUKOV D 13, STEART D R. Memristive de- vices for computing l-J]. Nature Nanotechnology, 2013, 8 (1): 13-24.
  • 4YANG J J, ZHANG M X, STRACHAN J P. High switching endurance in TaO~ memristive devices [J]. Applied Physics Letters, 2010, 97 (23): 232102-1-232102-3.
  • 5BORGHETTI J, SNIDER G S, KUEKES P J, et al. "Memris- tire" switches enable'stateful" logic operations via material impli- cation [J]. Nature Letters, 2010, 464 (7290): 873- 876.
  • 6PERSHIN Y V, FONTA1NE S L, VENTRA M D, et a|. Memristive model of amoeba learning [J]. Physical Review: E, 2009, 80 (2):021926-021931.
  • 7JO S H, CHANG T, EBONG I, et al. Nanoscale memristor device as synapse in neuromorphic systems [J~. Nano Let- ters, 2010, 10 (4): 1297-1301.
  • 8CHAKRABORTI S, CHOWDHARY P V, DATTA K, et al. BBD based synthesis of boolean functions using memristors EC] //Proceedings of the 9'h International Design and Test Symposium. Algiers, Algeria, 2014: 136-14l.
  • 9TEIMOORY M, AMIRSOLEIMANI A, SHAMSI J, et al. Optimized implementation of memristor-based full adder by material implication logic EC~ //Proceedings of the 2Pt IEEE International Conference on Electronics, Circuit and Systems. Marseille, France, 2014: 562-565.
  • 10KVATINSKY S, KOLODNY A, FRIEDMAN E G, et al. Memristor-based IMPLY logic design procedure [C~ //Pro- ceedings of the IEEE 29th International Conference on Com- puter Design. Amherst, MA, USA, 2011: 142-147.

共引文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部