一种适用于桥式电路的碳化硅MOSFET驱动器

A Novel SiC MOSFET Gate Driver Circuit for Bridge Circuit

作为一种宽禁带器件,碳化硅(SiC)金属-氧化物-半导体场效应晶体管(MOSFET)可以工作在高温、高阻断电压和高开关频率的条件下。然而,较高的开关速度会使电路寄生参数对驱动信号造成的不利影响增强,使得开关瞬态的驱动电压尖峰提高。相较于硅(Si)MOSFET,SiC MOSFET的栅源极承受负压的能力较低。所述方案通过在栅源极并联一个PNP型三极管和电容的方式来抑制负压尖峰,从而使MOSFET驱动在高频状态下仍然能正常工作。通过仿真和实验验证,在不降低开关速度的前提下可有效消除负压尖峰。

As a wide bandgap device, silicon carbide （SiC） metal-oxide-semiconductor field-effect transistor （MOSFET） can operate under high temperature, high blocking voltage and high switching frequency.However, higher switching speed will increase the adverse effect of parasitic parameters on the driving signal and increase the driving voltage spike of the switch transient.Compared with silicon（Si） MOSFET, SiC MOSFET gate source is less able to bear negative pressure.The scheme suppresses the negative voltage spike by paralleling a PNP transistor and a capacitor at the gate source,so that the MOSFET driver can still work normally in the high frequency state.Simulation and experimental results show that the negative pressure spike can be effectively eliminated without decreasing the switching speed.