二氧化锡/石墨烯气敏薄膜的制备及性能

Preparation and Properties of Tin Dioxide/Graphene Gas Sensitive Film

采用改进的Hummers法制备氧化石墨烯与碱法还原氧化石墨烯,采用溶胶凝胶法制备二氧化锡,通过调控石墨烯的掺杂质量与二氧化锡溶胶配比浓度,利用提拉法制备二氧化锡/石墨烯薄膜。经退火处理,石墨烯的掺杂质量与二氧化锡溶胶浓度比为1 mg/10 ml的薄膜的XRD图谱表明,石墨烯在28.2°左右出现其明显的特征峰,掺杂的石墨烯不改变二氧化锡的晶体结构;同时SEM形貌分析表明,膜表面二氧化锡晶粒与石墨烯界面结合紧密、连续性好。将二氧化锡/石墨烯薄膜做成叉指电极,传感器对一氧化碳、甲烷气体敏感,与未复合石墨烯的二氧化锡薄膜传感器相比,灵敏度、响应时间、恢复时间等指标有明显改善。

TThe improved Hummers method was used to prepare graphene oxide and alkali-reduced graphene oxide. The sol-gel method was used to prepare tin dioxide. By adjusting the doping quality of graphene and the concentration ratio of tin dioxide sol, the pulling method was used. XRD patterns of tin dioxide/graphene films prepared by annealing, graphene doping quality and tin dioxide sol concentration of 1 mg/10 ml showed that graphene showed obvious characteristic peaks at 28.2 °. The doped graphene does not change the crystal structure of tin dioxide. At the same time, the SEM morphology analysis shows that the tin dioxide grains on the surface of the film are fine, tightly bound with graphene, and the film continuity is good. The tin dioxide/graphene film is made into a fork electrode, and the sensor is sensitive to carbon monoxide and methane gas. Compared with the tin dioxide sensor without uncomplexed graphene, the sensitivity, response time, recovery time and other indicators have been improved.