摘要
采用电子辅助热灯丝化学气相沉积(EA-CVD)方法沉积大面积金刚石膜,在金刚石膜的沉积过程中,灯丝平面与衬底间距对金刚石膜沉积的影响会直接影响着金刚石膜的生长和质量。用Raman手段对金刚石膜的生长特性进行了表征。
Large area diamond films were deposited by EA-CVD method.During deposition,the growth and quality of diamond films were influenced by the change of the distance between the filament and the substrate.The growth property of diamond film was characterized using Laman spectrum.
出处
《长春大学学报》
2007年第6期24-26,共3页
Journal of Changchun University
基金
吉林省科技厅科技基金资助项目(10647104)
关键词
金刚石膜
灯丝平面与衬底间距
膜的质量
diamond film
the distance between the filament and the substrate
quality of diamond films