负偏压功率对溅射沉积钛、铜薄膜电阻的影响

Influence of Bias Power on Sheet Resistance of Ti and Cu Thin Films Deposited by Magnetron Sputtering

为了研究负偏压功率对直流溅射沉积铜、钛两种金属薄膜电阻率的影响,在采用相同的工艺条件溅射沉积两种金属薄膜的同时分别加上0、50、150 W的负偏压功率,发现随着偏压功率由0增加到150 W,制备的钛薄膜厚度下降了25%,电阻率下降到原来的18%,而对于铜薄膜随着偏压功率由0增加150 W,厚度下降了5%,电阻率却增加到原来的4倍。用原子力显微镜和X射线衍射仪器分析了不同负偏压功率下制备的两种金属薄膜的表面粗糙度和两种金属薄膜的结晶情况,并用Fuchs-Sondheimer理论和Mayadas-Shatzkes理论解释偏压功率引起两种金属电阻变化的原因。这为教学实验、真空镀膜工艺和集成电路生产领域沉积不同结构及电阻的金属薄膜提供参考。

The Cu and Ti thin films were deposited by DC magnetron sputtering on substrate of Si wafer. The influence of the substrate bias power on the microstructures, thickness and sheet resistance of the Ti-and Cu-coatings was investigated with X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The preliminary results show that the power of negative bias significantly affected the thickness and sheet resistance. As the bias power increased from 0. 0 W to 150 W,the thickness and sheet resistance of the Ti-coating decreased by 25% and by 18%,respectively, the thickness of the Cu-coating decreased by 5% but the sheet resistance increased four times. The posible mechanism responsible for the impact of bias power on synthesis and properties of Ti-and Cucoatings was tentativly discussed.