方形三维沟槽电极硅探测器相干性影响因素研究

Study of Influencing Factors of the Relevance of Square 3D Trench Electrode Si Detector

为了研究三维沟槽电极硅探测器相邻单元之间的相干性的影响因素,根据Ramo定理提出的电信号产生原理,需要观察不同条件下探测器单元中比重场的变化.该文以方形三维沟槽电极硅探测器为研究对象,利用仿真工具Silvaco TCAD仿真出方形三维沟槽电极硅探测器的结构,采取单个最小电离粒子(MIP)从探测器上部垂直入射的方式,通过改变高能粒子入射的位置和探测器的沟槽深度,来研究探测器相邻单元中的比重场变化,进而得出相干性的影响因素.

In order to research the influencing factors of the relevance between adjacent units of the 3D trench electrode Si detector, according to the generation principle of electrical signals proposed by Ramo theorem, we need to observe the changes of weighting field in the detector units under different conditions. In this paper, we take the Si detector based on square 3D trench electrode as the research object and use Silvaco TCAD to simulate square 3D trench electrode Si detector structure. Adopting a single minimum ionization particle （MIP） from upper vertical incidence of detector, we change the incident location of energetic particle and prode the trench depth to study the change of weighting field in the adjacent detector unit, then the influence factors of relevance are obtained.