Interfacial Properties of AlN/Si(111) Grown by Metal—Organic Chemical Vapour Deposition
参考文献14
-
1Stevens K S, Kinniburgh M, Schwartzman A F, Ohtani A and Beresford R 1995 Appl. Phys. Lett. 69 3179
-
2Amano H, Sawakai N, Akasaki I and Toyoda Y 1986 Appl.Phys. Lett. 48 353
-
3Akasaki I, Amano H, Kiode Y, Hiramateu K and Sawakai N 1989 J. Cryst. Growth 98 209
-
4Watanabe A, Takeuchi T, Hirosawa K, Amano H, Hiramatsu K and Akasaki I 1993 J. Cryst Growth 128 391
-
5Nakamura S, Muhai T and Senoh M 1994 Appl Phys.Lett.64 1687.
-
6Guha S and Bojarczuk N A 1998 Appl. Phys. Lett. 72 415
-
7Chen P, Xie S Y, Chen Z Z et al 2000 J. Cryst. Growth 231 27
-
8Ponce F A, Major J S, Plano W E and Welch D F 1994 Appl. Phys. Lett. 62 2302
-
9Nikishin S A, Faleev N N, Antipov V G: Francorur S,Grave de Peralta L, Seryogin G A, Temkin H, Prokofyeva I, Holtz M and Chu S N G 1999 Appl. Phys. LeTt. 75 2073
-
10Chen P, Zhang R, Zhao Z M, Xi D J, Shen B, Chen Z Z,Zhou Y G, Xie S Y and Zheng Y D 2000 12th Am. Conf.on Crystal Growth and Epitaxy
-
1Yichu WU,Yufang ZHENG,Deming LIN and Aiguo SU(Department of Physics, Zhongshan University, Guangzhou 510275, China)To whom correspondence should be addressed E-mail:stdp04@zsu.edu.cn.Interfacial Structure of Nanocrystalline SnO_2 and SiO_2-doped SnO_2[J].Journal of Materials Science & Technology,1999,15(4):388-388.
-
2吴黎黎,吴锋民.Ge/Pb/Si(111)生长中Ge原子沿团簇边缘扩散的三维Monte-Carlo模拟[J].计算物理,2013,30(3):441-446.
-
3曹传宝,彭定坤,孟广耀.含卤素源物质的金刚石薄膜淀积[J].应用科学学报,1995,13(4):483-487.
-
4劳浦东,过毅乐,张晓峰,姚文华,徐飞,丁永庆.GaAs(100)衬底上金属有机物化学汽相淀积法生长的CdTe膜喇曼光谱研究[J].Journal of Semiconductors,1992,13(10):589-594. 被引量:1
-
5胡海昌.薄板弯曲理论中一个新的广义变分原理及其交替max,min性质[J].力学学报,1990,22(4):392-401. 被引量:2
-
6P. C. Li,李桂荣.佛斯隆介质膜的化学汽相淀积生长及其特性[J].半导体情报,1989,26(4):56-63.
-
7郭庆尧,金希卓.CVD反应器内基座倾斜时流场的有限分析方法数值计算[J].吉林大学自然科学学报,1993(4):42-48.
-
8YANG Dechao,LIANG Hongwei,QIU Yu,LI Pengchong,LIU Yang,SHEN Rensheng,XIA Xiaochuan,YU Zhennan,CHANG Yuchun,ZHANG Yuantao,DU Guotong.Selective Growth of GaN on Slope Cone-shaped Patterned Sapphire Substrate[J].Chemical Research in Chinese Universities,2014,30(4):556-559.
-
9镀膜技术及设备[J].中国光学,1997(3):76-77.
-
10宣凯,颜晓红,丁书龙,杨玉荣,肖杨,郭朝辉.The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance[J].Chinese Physics B,2006,15(2):460-465.