表面有微结构的硅片键合技术

Bonding technology of silicon wafer with micro-structure on surface

针对表面带有微结构硅晶圆的封装展开研究,以采用Ti/Au作为金属过渡层的硅—硅共晶键合为对象,提出一种表面带有微结构的硅—硅共晶键合工艺,以亲水湿法表面活化处理降低硅片表面杂质含量,以微装配平台与键合机控制键合环境及温度来保证键合精度与键合强度,使用恒温炉进行低温退火,解决键合对硅晶圆表面平整度和洁净度要求极高,环境要求苛刻的问题。高低温循环测试试验与既定拉力破坏性试验结果表明:提出的工艺在保证了封装组件封装强度的同时,具有工艺温度低、容易实现图形化、应力匹配度高等优点。

A novel Si-Si wafer bonding method is presented to achieve micro-structured surface silicon wafer package.Ti/Au is chosen as metal transition layer to ensure the bonding force.Hydrophilic wet method is used for surface treatment and to reduce the surface impurity content,micro assembly platform and bonding machine are used to control the bonding environment and temperature to ensure both precision and strength of bonding.Silicon wafer is annealed by using constant temperature furnace.This method can achieve bonding with low level silicon wafer surface and the degree of cleanliness requirements,harsh environmental requirements.The results of high and low temperature cycle test and the established tensile failure test show that this method ensures the strength of the packaging module,and has the advantages of low process temperature,easy realization of graphics and high degree of stress matching.